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Power MOSFET BSZ150N10LS3GATMA1

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    MPN BSZ150N10LS3 G
    Other # BSZ150N10LS3GATMA1
    Mfr. Infineon
    Oneyac # A-BSZ150N10LS3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 40A
    Rds On(Max)@Id,Vgs 15mΩ
    Gate voltage Vgs 10V
    QG gate charge 26nC
    to configure Single
    Pd power dissipation (Max) 63W
    height 1.10mm
    length 3.3mm
    Series OptiMOS3
    FET type N-Channel
    Forward transconductance - minimum value 21S
    Descent time 3.9ns
    rise time 4.6ns
    Typical shutdown delay time 23.4ns
    Typical connection delay time 8.1ns
    working temperature -55°C~150°C
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