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Power MOSFET BSZ180P03NS3GATMA1

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    MPN BSZ180P03NS3 G
    Other # BSZ180P03NS3GATMA1
    Mfr. Infineon
    Oneyac # A-BSZ180P03NS3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 39.6A
    Rds On(Max)@Id,Vgs 13.5mΩ
    Gate voltage Vgs 25V
    QG gate charge 30nC
    to configure Single
    Pd power dissipation (Max) 40W
    height 1.10mm
    length 3.3mm
    Series OptiMOSP3
    FET type P-Channel
    Forward transconductance - minimum value 18S
    Descent time 3ns
    rise time 11ns
    Typical shutdown delay time 20ns
    working temperature -55°C~150°C
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