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Power MOSFET BSC067N06LS3GATMA1

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    MPN BSC067N06LS3 G
    Other # BSC067N06LS3GATMA1
    Mfr. Infineon
    Oneyac # A-BSC067N06LS3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 50A
    Rds On(Max)@Id,Vgs 6.7mΩ
    Gate voltage Vgs 20V
    QG gate charge 67nC
    to configure Single
    Pd power dissipation (Max) 69W
    height 1.27mm
    length 5.9mm
    FET type N-Channel
    width 5.15mm
    Forward transconductance - minimum value 38S
    Descent time 7ns
    rise time 26ns
    Typical shutdown delay time 37ns
    Typical connection delay time 15ns
    working temperature -55°C~150°C
    Series OptiMOS™
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