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Power MOSFET BSC060P03NS3EGATMA1

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    MPN BSC060P03NS3E G
    Other # BSC060P03NS3EGATMA1
    Mfr. Infineon
    Oneyac # A-BSC060P03NS3E G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

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    Datasheet

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    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Descent time 34 nS
    Gate charge Qg 61 nC
    rise time 139 nS
    Typical shutdown delay time 66 nS
    Part number alias BSC060P03NS3EGATMA1 BSC060P03NS3EGXT SP000472984
    to configure Single Quad Drain Triple Source
    Number of channels 1Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 100A
    Rds On(Max)@Id,Vgs 6mΩ
    Gate voltage Vgs 25V
    QG gate charge 61nC
    Pd power dissipation (Max) 83W
    height 1.27mm
    length 5.9mm
    Series OptiMOSP3
    FET type P-Channel
    width 5.15mm
    working temperature -55°C~150°C
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