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Power MOSFET SOT-23

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    MPN IRLML6402TRPBF
    Mfr. Infineon
    Oneyac # A-IRLML6402TRPBF
    Supplier Oneyac
    Unleaded/RoHs Lead Free/Rohs
    Description
    Package/Enclosure : SOT-23 Series : HEXFET®

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 2.5V,4.5V
    Vgs (th) at different IDs (maximum value) 1.2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 12nC @ 5V
    Input capacitance (Ciss) at different Vds (maximum value) 633pF @ 10V
    Gate voltage Vgs ±12V
    Pd power dissipation (Max) 1.3W
    Rds On(Max)@Id,Vgs 65mΩ@3.7A,4.5V
    working temperature -55°C~150°C
    FET type P-Channel
    Continuous drain current Id 3.7A
    Drain source voltage Vds 20V
    Package/Enclosure SOT-23
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    In Stock :  3,440 Lead Time:12W

    Qty. Unit Price Ext. Price
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    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 5~7 Working Days
    Min. 1 Mult. 1

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