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Power MOSFET SOT-23-3

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    MPN SI2356DS-T1-GE3
    Mfr. Vishay
    Oneyac # A-SI2356DS-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-23-3 Series : TrenchFET®

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series TrenchFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 2.5V,10V
    Vgs (th) at different IDs (maximum value) 1.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 13nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 370pF @ 20V
    Gate voltage Vgs ±12V
    Pd power dissipation (Max) 960mW(Ta),1.7W(Tc)
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOT-23-3
    FET type N-Channel
    Continuous drain current Id 4.3A
    Rds On(Max)@Id,Vgs 56mΩ
    Drain source voltage Vds 1.5V
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