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Power Mosfet HSMT-8

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    MPN RQ3E080GNTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A-RQ3E080GNTB
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : HSMT-8

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Continuous Drain Current Id 8A
    Pd-power dissipation (Max) 2W
    Qg-gate charge 5.8nC
    Rds On(Max)@Id,Vgs 16.7mΩ@8A,10V
    Drain-source voltage Vds 30V
    Gate voltage Vgs ±20V
    Rise Time 3.6ns
    Fall time 2.4ns
    Typical off delay time 17.3ns
    Typical on-delay time 6.9ns
    Package/Enclosure HSMT-8
    fet type N-Channel
    Forward Transconductance-Minimum 7S
    Number of channels 1Channel
    Configuration Single
    Operating temperature -55°C~150°C
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    In Stock :  0

    Qty. Unit Price Ext. Price
    460+ $0.2709 $124.614
    1,500+ $0.1718 $257.7

    Full Reel (Order in multiples of 3000)

    3,000+ $0.1242 $372.6

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK Contact Us
    Min. 460 Mult. 1

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