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Power MOSFET HSMT-8

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    MPN RQ3E080GNTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A-RQ3E080GNTB
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs Lead Free/Rohs
    Description
    Package/Enclosure : HSMT-8

    Specifications FAQ

    Product Attribute Attribute Value Operation
    Product Category Power MOSFET
    Continuous drain current Id 8A
    Pd power dissipation (Max) 2W
    QG gate charge 5.8nC
    Rds On(Max)@Id,Vgs 16.7mΩ@8A,10V
    Drain source voltage Vds 30V
    Gate voltage Vgs ±20V
    rise time 3.6ns
    Descent time 2.4ns
    Typical shutdown delay time 17.3ns
    Typical connection delay time 6.9ns
    Package/Enclosure HSMT-8
    FET type N-Channel
    Forward transconductance - minimum value 7S
    Number of channels 1Channel
    to configure Single
    working temperature -55°C~150°C
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    In Stock :  0

    Qty. Unit Price Ext. Price
    460+ $0.292 $134.32
    1,500+ $0.1852 $277.8

    Full Reel (Order in multiples of 3000)

    3,000+ $0.1339 $401.7

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK Contact Us
    Min. 460 Mult. 1

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