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Power MOSFET 8-SOIC

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    MPN RS3E135BNGZETB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A-RS3E135BNGZETB
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-SOIC

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 9.5A(Ta)
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 1mA
    Gate charge (Qg) at different Vgs (maximum value) 8.3nC @ 4.5V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 680pF @ 15V
    Pd power dissipation (Max) 2W(Tc)
    Rds On(Max)@Id,Vgs 14.6mΩ@9.5A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure 8-SOIC
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