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Power MOSFET DFN2020-8

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    MPN RF4E110GNTR
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A-RF4E110GNTR
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : DFN2020-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Continuous drain current Id 11A
    Pd power dissipation (Max) 2W
    QG gate charge 7.4nC
    Rds On(Max)@Id,Vgs 11.3mΩ@11A,10V
    Drain source voltage Vds 30V
    Gate voltage Vgs ±20V
    rise time 5.5ns
    Descent time 3ns
    Typical shutdown delay time 21ns
    Typical connection delay time 9ns
    Package/Enclosure DFN2020-8
    FET type N-Channel
    Forward transconductance - minimum value 6S
    Series RF4E110GN
    Number of channels 1Channel
    to configure Single
    working temperature -55°C~150°C
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    In Stock :  88

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