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Power MOSFET HSMT

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    MPN RQ3E075ATTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A-RQ3E075ATTB
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : HSMT

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 1mA
    Gate charge (Qg) at different Vgs (maximum value) 10.4nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 930pF @ 15V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 15W(Tc)
    Rds On(Max)@Id,Vgs 23mΩ@7.5A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure HSMT
    FET type P-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 7.5A
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    In Stock :  95

    Qty. Unit Price Ext. Price
    1+ $1.5448 $1.5448
    100+ $0.8929 $89.29
    1,500+ $0.5661 $849.15

    Full Reel (Order in multiples of 3000)

    3,000+ $0.4093 $1,227.9

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 5~7 Working Days
    Min. 1 Mult. 1

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