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Power Mosfet HSMT-8

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    MPN RQ3E180GNTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A-RQ3E180GNTB
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : HSMT-8

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Continuous Drain Current Id 18A
    Pd-power dissipation (Max) 2W
    Qg-gate charge 22.4nC
    Rds On(Max)@Id,Vgs 4.3mΩ@18A,10V
    Drain-source voltage Vds 30V
    Gate voltage Vgs ±20V
    Rise Time 6.9ns
    Fall time 10.2ns
    Typical off delay time 56.8ns
    Typical on-delay time 16.5ns
    Package/Enclosure HSMT-8
    fet type N-Channel
    Forward Transconductance-Minimum 17S
    Number of channels 1Channel
    Configuration Single
    Operating temperature -55°C~150°C
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