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Power MOSFET TO-220AB

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    MPN IRFB4115PBF
    Mfr. Infineon
    Oneyac # A-IRFB4115PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 150 V 11 mOhm 120 nC 380 W Silicon Flange Mount Mosfet TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 120nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 5270pF @ 50V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 380W(Tc)
    Rds On(Max)@Id,Vgs 11mΩ@62A,10V
    working temperature -55°C~175°C(TJ)
    FET type N-Channel
    Continuous drain current Id 104A
    Drain source voltage Vds 150V
    Package/Enclosure TO-220AB
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    In Stock :  1,000 Lead Time:14W

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 5~7 Working Days
    Min. 1 Mult. 1

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