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Power MOSFET BSC040N10NS5ATMA1 PG-TDSON-8

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    MPN BSC040N10NS5
    Other # BSC040N10NS5ATMA1
    Mfr. Infineon
    Oneyac # A-BSC040N10NS5
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : PG-TDSON-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Package/Enclosure PG-TDSON-8
    Number of channels 1Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 100A
    Rds On(Max)@Id,Vgs 4mΩ@50A,10V
    Gate voltage Vgs ±20V
    QG gate charge 58nC
    to configure SingleQuadDrainTripleSource
    Pd power dissipation (Max) 139W
    height 1.27mm
    length 5.9mm
    FET type N-Channel
    width 5.15mm
    Forward transconductance - minimum value 60S
    Development kit EVAL_1K4W_ZVS_FB_CFD7
    Descent time 10ns
    rise time 9ns
    Typical shutdown delay time 32ns
    Typical connection delay time 13ns
    working temperature -55°C~150°C
    Series OptiMOS™
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