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Power MOSFET BSC100N10NSFGATMA1 TDSON-8-1

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    MPN BSC100N10NSF G
    Other # BSC100N10NSFGATMA1
    Mfr. Infineon
    Oneyac # A-BSC100N10NSF G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TDSON-8-1

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 90A
    Rds On(Max)@Id,Vgs 10mΩ@25A,10V
    Gate voltage Vgs ±20V
    QG gate charge 44nC
    to configure SingleQuadDrainTripleSource
    Pd power dissipation (Max) 156W
    height 1.27mm
    length 5.9mm
    Series OptiMOS2
    width 5.15mm
    Forward transconductance - minimum value 61S,31S
    Descent time 7ns
    rise time 23ns
    Typical shutdown delay time 26ns
    Typical connection delay time 18ns
    working temperature -55°C~150°C
    Package/Enclosure TDSON-8-1
    FET type N-Channel
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