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Power Mosfet BSC100N10NSFGATMA1 TDSON-8-1

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    MPN BSC100N10NSF G
    Other # BSC100N10NSFGATMA1
    Mfr. Infineon
    Oneyac # A-BSC100N10NSF G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TDSON-8-1

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Package/Enclosure TDSON-8-1
    length 5.9mm
    Drain-source voltage Vds 100V
    Configuration SingleQuadDrainTripleSource
    Qg-gate charge 44nC
    Rise Time 23ns
    height 1.27mm
    width 5.15mm
    Fall time 7ns
    Typical off delay time 26ns
    Number of channels 1Channel
    Gate voltage Vgs ±20V
    Rds On(Max)@Id,Vgs 10mΩ@25A,10V
    Continuous Drain Current Id 90A
    Pd-power dissipation (Max) 156W
    Typical on-delay time 18ns
    Series OptiMOS2
    Operating temperature -55°C~150°C
    fet type N-Channel
    Forward Transconductance-Minimum 61S,31S
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