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Power Mosfet IPB025N08N3GATMA1 PG-TO263-3

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    MPN IPB025N08N3 G
    Other # IPB025N08N3GATMA1
    Mfr. Infineon
    Oneyac # A-IPB025N08N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : PG-TO263-3

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Configuration Single
    Fall time 33ns
    Rds On(Max)@Id,Vgs 2.5mΩ
    Pd-power dissipation (Max) 300W
    Package/Enclosure PG-TO263-3
    Rise Time 73ns
    height 4.4mm
    Typical off delay time 86ns
    Typical on-delay time 28ns
    fet type N-Channel
    Series OptiMOS™
    length 10mm
    Drain-source voltage Vds 80V
    width 9.25mm
    Number of channels 1Channel
    Continuous Drain Current Id 120A
    Gate voltage Vgs 20V
    Operating temperature -55°C~175°C
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    In Stock :  1,000 Lead Time:22W

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    Min. 1 Mult. 1