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Power MOSFET SOIC-8

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MPN SI4126DY-T1-GE3
Mfr. Vishay
Authorized Distributor
Oneyac # A-SI4126DY-T1-GE3
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description
Package/Enclosure : SOIC-8 Gate voltage Vgs : ±20V Rds On(Max)@Id,Vgs : 2.7mΩ

Specifications FAQ

Description Details Operation
Product Category Power MOSFET
Series TrenchFET®
Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 105nC @ 10V
Input capacitance (Ciss) at different Vds (maximum value) 4405pF @ 15V
Gate voltage Vgs ±20V
Pd power dissipation (Max) 3.5W(Ta),7.8W(Tc)
working temperature -55°C~150°C(TJ)
Package/Enclosure SOIC-8
FET type N-Channel
Drain source voltage Vds 30V
Continuous drain current Id 39A
Rds On(Max)@Id,Vgs 2.7mΩ
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In Stock :  0 Lead Time:18W

Qty. Unit Price Ext. Price
1+ : Inquiry
When unpacking without original label and tray!
MPQ 2,500 ETD HK Contact Us
Min. 1 Mult. 1
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