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Power MOSFET IPB107N20N3GATMA1 TO-263-3

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    MPN IPB107N20N3 G
    Other # IPB107N20N3GATMA1
    Mfr. Infineon
    Oneyac # A-IPB107N20N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263-3 Series : OptiMOS™

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 200V
    Continuous drain current Id 88A
    Rds On(Max)@Id,Vgs 10.7mΩ@88A,10V
    Gate voltage Vgs ±20V
    QG gate charge 87nC
    to configure Single
    Pd power dissipation (Max) 300W
    height 4.4mm
    length 10mm
    FET type N-Channel
    width 9.25mm
    Forward transconductance - minimum value 71S
    Descent time 11ns
    rise time 26ns
    Typical shutdown delay time 41ns
    Typical connection delay time 18ns
    working temperature -55°C~175°C
    Package/Enclosure TO-263-3
    Series OptiMOS™
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    In Stock :  1,000 Lead Time:22W

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 5~7 Working Days
    Min. 1 Mult. 1