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Power MOSFET SOT-363 20V

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    MPN SQ1912AEEH-T1_GE3
    Mfr. Vishay
    Oneyac # A-SQ1912AEEH-T1_GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-363

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 2Channel
    to configure Dual
    height 1mm
    length 2.1mm
    Series SQ
    FET type 2N-Channel
    width 1.25mm
    Continuous drain current Id 800mA
    QG gate charge 1.25nC
    Rds On(Max)@Id,Vgs 200mΩ
    Drain source voltage Vds 20V
    Gate voltage Vgs 450mV
    rise time 108ns
    Descent time 390ns
    Typical shutdown delay time 715ns
    Typical connection delay time 66ns
    Forward transconductance - minimum value 2.6S
    working temperature -55°C~175°C
    Package/Enclosure SOT-363
    Pd power dissipation (Max) 1.5W
    Voltage Rating 20V
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