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Power MOSFET SOIC-8

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    MPN SIRA00DP-T1-GE3
    Mfr. Vishay
    Oneyac # A-SIRA00DP-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC-8 Series : TrenchFET®

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series TrenchFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 220nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 11700pF @ 15V
    Gate voltage Vgs +20V,-16V
    Pd power dissipation (Max) 6.25W(Ta),104W(Tc)
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOIC-8
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 60A
    Rds On(Max)@Id,Vgs 1mΩ
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