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Power MOSFET IPB042N10N3GATMA1 PG-TO263-3

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    MPN IPB042N10N3 G
    Other # IPB042N10N3GATMA1
    Mfr. Infineon
    Oneyac # A-IPB042N10N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    MOSFET N-CH 100V 100A TO263-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    FET type N-Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 100A(Tc)
    Drive voltage @ Rds On (Max), Rds On (Min) 6V,10V
    Vgs (th) at different IDs (maximum value) 3.5V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 117nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 8410pF @ 50V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 214W(Tc)
    Rds On(Max)@Id,Vgs 4.2mΩ@50A,10V
    working temperature -55°C~175°C(TJ)
    Package/Enclosure PG-TO263-3
    Series OptiMOS™
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