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Power MOSFET IPW65R190CFD TO-247-3

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    MPN IPW65R190CFDFKSA1
    Other # IPW65R190CFD
    Mfr. Infineon
    Oneyac # A3a-IPW65R190CFDFKSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-247-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 17.5A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 190 milliohms @ 7.3A, 10V
    Vgs (th) (maximum value) for different IDs 4.5V @ 730uA
    Input capacitance (Ciss) at different Vds (maximum value) 1850pF @ 100V
    Gate charge (Qg) at different Vgs (maximum value) 68nC @ 10V
    Power dissipation (maximum value) 151W(Tc)
    Package/Enclosure TO-247-3
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 650V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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    In Stock :  168

    Qty. Unit Price Ext. Price
    3+ $3.0086 $9.0258
    10+ $2.7501 $27.501
    25+ $2.6466 $66.165
    50+ $2.5949 $129.745
    100+ $2.5265 $252.65

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 240 ETD HK 1~2 Weeks
    Min. 3 Mult. 1