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Small signal MOSFET DFN1010-3W

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    MPN BSS84XHZGG2CR
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-BSS84XHZGG2CR-0
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : DFN1010-3W

    Specifications FAQ

    Description Details Operation
    Product Category Small signal MOSFET
    working temperature 150°C(TJ)
    technology MOSFET (Metal Oxide)
    FET type P channel
    Leakage source voltage (Vdss) 60V
    Input capacitance (Ciss) at different Vds (maximum value) 34pF @ 30V
    Package/Enclosure DFN1010-3W
    Current at 25 ° C - Continuous Drain (Id) 230mA(Ta)
    Vgs (th) (maximum value) for different IDs 2.5V @ 100?A
    Power dissipation (maximum value) 1W(Ta)
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 5.3 ohms @ 230mA, 10V
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    In Stock :  7,950

    Qty. Unit Price Ext. Price
    120+ $0.1869 $22.428
    500+ $0.1776 $88.8
    1,000+ $0.1697 $169.7
    2,000+ $0.1644 $328.8
    4,000+ $0.1644 $657.6

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 8,000 ETD HK 1~2 Weeks
    Min. 120 Mult. 1

    Special Note

    Production Year: 2024