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Small signal MOSFET TUMT

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    MPN RZF013P01TL
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3-RZF013P01TL
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TUMT

    Specifications FAQ

    Description Details Operation
    Product Category Small signal MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 1.5V,4.5V
    Vgs (th) at different IDs (maximum value) 1V @ 1mA
    Gate charge (Qg) at different Vgs (maximum value) 2.4nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 290pF @ 6V
    Gate voltage Vgs ±10V
    Pd power dissipation (Max) 800mW(Ta)
    Rds On(Max)@Id,Vgs 260mΩ@1.3A,4.5V
    working temperature 150°C(TJ)
    Package/Enclosure TUMT
    FET type P-Channel
    Drain source voltage Vds 12V
    Continuous drain current Id 1.3A
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