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Power MOSFET TO-252

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    MPN SQD40P10-40L_GE3
    Mfr. Vishay
    Oneyac # A3-SQD40P10-40L_GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series Automotive grade, AEC-Q101, TrenchFET ®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 144nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 5540pF @ 15V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 136W(Tc)
    working temperature -55°C~175°C(TJ)
    Package/Enclosure TO-252
    FET type P-Channel
    Drain source voltage Vds -100V
    Continuous drain current Id -38A
    Rds On(Max)@Id,Vgs 40mΩ@8.2A,10V
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