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Power MOSFET IPT020N10N3ATMA1

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    MPN IPT020N10N3
    Other # IPT020N10N3ATMA1
    Mfr. Infineon
    Oneyac # A33-IPT020N10N3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 300A
    Rds On(Max)@Id,Vgs 2mΩ
    Gate voltage Vgs 10V
    QG gate charge 156nC
    to configure Single
    Pd power dissipation (Max) 375W
    height 2.4mm
    length 10.58mm
    Series OptiMOS3
    FET type N-Channel
    width 10.1mm
    Forward transconductance - minimum value 125S
    Descent time 18ns
    rise time 58ns
    Typical shutdown delay time 84ns
    Typical connection delay time 34ns
    working temperature -55°C~175°C
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    In Stock :  1,975

    Qty. Unit Price Ext. Price
    3+ $7.3008 $21.9024
    10+ $6.9298 $69.298
    50+ $6.7178 $335.89
    100+ $6.4926 $649.26
    500+ $6.3998 $3,199.9
    1,000+ $6.3071 $6,307.1

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,000 ETD HK 1~2 Weeks
    Min. 3 Mult. 1

    Special Note

    Production Year: 2023