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Power MOSFET TO-263-3,D²Pak,TO-263AB D2PAK D²PAK TO-263-3, D ² Pak (2 leads+tab), TO-263AB

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    MPN FDB33N25TM
    Mfr. ON Semiconductor
    Oneyac # A36-FDB33N25TM
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263-3,D²Pak,TO-263AB Package/Enclosure : D2PAK Package/Enclosure : D²PAK Package/Enclosure : TO-263-3, D ² Pak (2 leads+tab), TO-263AB

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    Datasheet

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    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series UniFET™
    Vgs (th) at different IDs (maximum value) 5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 48nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 2135pF @ 25V
    Pd power dissipation (Max) 235W(Tc)
    Rds On(Max)@Id,Vgs 94m Ohms@16.5A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure TO-263-3,D²Pak,TO-263AB
    Package/Enclosure D2PAK
    Continuous drain current Id 33A
    FET type N-Channel
    Drain source voltage Vds 250V
    Continuous drain current Id 33A(Tc)
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 48nC @ 10V
    Gate voltage Vgs ±30V
    Input capacitance (Ciss) at different Vds (maximum value) 2135pF @ 25V
    Power Rating 235W(Tc)
    Rds On(Max)@Id,Vgs 94 milliohms @ 16.5A, 10V
    working temperature -55°C ~ 150°C(TJ)
    Package/Enclosure D²PAK
    Package/Enclosure TO-263-3, D ² Pak (2 leads+tab), TO-263AB
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    In Stock :  625

    Qty. Unit Price Ext. Price
    7+ $1.1089 $7.7623
    100+ $0.8868 $88.68

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 800 ETD HK 1~2 Weeks
    Min. 7 Mult. 1

    Special Note

    Production Date: Within 2 years