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Power MOSFET TSMT

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    MPN QH8MA2TCR
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A36-QH8MA2TCR
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TSMT

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Rds On(Max)@Id,Vgs 35mΩ@4.5A,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 1mA
    Gate charge (Qg) at different Vgs (maximum value) 8.4nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 365pF @ 10V
    Pd power dissipation (Max) 1.25W
    working temperature 150°C(TJ)
    Package/Enclosure TSMT
    FET type N+P-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 12A
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    In Stock :  5,449

    Qty. Unit Price Ext. Price
    60+ $0.122 $7.32
    200+ $0.0843 $16.86
    1,500+ $0.0766 $114.9

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 60 Mult. 1

    Special Note

    Production Date: Within 2 years