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Universal MOSFET TSMT3

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    MPN RDR005N25TL
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A36-RDR005N25TL
    Supplier Oneyac
    Product Cycle

    Production (Not Recommended for New Design)

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TSMT3

    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    working temperature 150°C(TJ)
    Drive voltage (maximum RdsOn, minimum RdsOn) 4V,10V
    technology MOSFET (Metal Oxide)
    FET type N channels
    Leakage source voltage (Vdss) 250V
    Input capacitance (Ciss) at different Vds (maximum value) 70pF @ 25V
    Package/Enclosure TSMT3
    Current at 25 ° C - Continuous Drain (Id) 500mA(Ta)
    Vgs (th) (maximum value) for different IDs 3V @ 1mA
    Power dissipation (maximum value) 540mW(Ta)
    What is the gate charge at different Vgs? (Qg) (maximum value) 3.5nC @ 10V
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 8.8 ohms @ 250mA, 10V
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    In Stock :  624

    Qty. Unit Price Ext. Price
    50+ $0.1537 $7.685
    200+ $0.1188 $23.76

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 50 Mult. 1

    Special Note

    Production Date: Within 2 years