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Power MOSFET BSC093N04LSGATMA1

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    MPN BSC093N04LS G
    Other # BSC093N04LSGATMA1
    Mfr. Infineon
    Oneyac # A36-BSC093N04LS G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 40V
    Continuous drain current Id 49A
    Rds On(Max)@Id,Vgs 9.3mΩ@40A,10V
    Gate voltage Vgs ±20V
    QG gate charge 24nC
    to configure Single
    Pd power dissipation (Max) 35W
    height 1.27mm
    length 5.9mm
    FET type N-Channel
    width 5.15mm
    Forward transconductance - minimum value 34S
    Descent time 2.8ns
    rise time 2.4ns
    Typical shutdown delay time 16ns
    Typical connection delay time 3.6ns
    working temperature -55°C~150°C
    Series OptiMOS™
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    In Stock :  149

    Qty. Unit Price Ext. Price
    30+ $0.2338 $7.014
    100+ $0.2316 $23.16

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 5,000 ETD HK 1~2 Weeks
    Min. 30 Mult. 1

    Special Note

    Production Date: 23+