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Power MOSFET BSC028N06NSATMA1

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    MPN BSC028N06NS
    Other # BSC028N06NSATMA1
    Mfr. Infineon
    Oneyac # A36-BSC028N06NS
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : OptiMOS™

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 100A
    Rds On(Max)@Id,Vgs 2.8mΩ
    Gate voltage Vgs 10V
    QG gate charge 37nC
    to configure SingleQuadDrainTripleSource
    Pd power dissipation (Max) 83W
    height 1.27mm
    length 5.9mm
    FET type N-Channel
    width 5.15mm
    Forward transconductance - minimum value 50S
    Descent time 8ns
    rise time 38ns
    Typical shutdown delay time 19ns
    Typical connection delay time 11ns
    working temperature -55°C~150°C
    Series OptiMOS™
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    In Stock :  200

    Qty. Unit Price Ext. Price
    20+ $0.5537 $11.074
    100+ $0.5484 $54.84

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 5,000 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Date: 23+