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MOSFET X2-DFN2015-3

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    MPN DMG3415UFY4Q-7
    Mfr. Diodes Incorporated
    Oneyac # A36-DMG3415UFY4Q-7
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : X2-DFN2015-3

    Specifications FAQ

    Description Details Operation
    Product Category MOSFET
    FET type P-Channel
    Pd power dissipation (Max) 650mW(Ta)
    RdsOn(Max)@Id,Vgs 39mΩ@4A,4.5V
    Gate voltage Vgs ±8V
    Input capacitance (Ciss) at different Vds (maximum value) 282 pF @ 10 V
    Gate charge (Qg) at different Vgs (maximum value) 10 nC @ 4.5 V
    Package/Enclosure X2-DFN2015-3
    working temperature -55℃~150℃(TJ)
    Drain source voltage Vds 16V
    Continuous drain current Id 2.5A(Ta)
    driving voltage 1.8V,4.5V
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    In Stock :  995

    Qty. Unit Price Ext. Price
    40+ $0.1734 $6.936
    200+ $0.1341 $26.82

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 40 Mult. 1

    Special Note

    Production Date: Within 2 years