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Power MOSFET SPB17N80C3ATMA1 TO-263

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    MPN SPB17N80C3
    Other # SPB17N80C3ATMA1
    Mfr. Infineon
    Oneyac # A3-SPB17N80C3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    MOSFET N-CH 800V 17A D2PAK

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series CoolMOS™
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 3.9V @ 1mA
    Gate charge (Qg) at different Vgs (maximum value) 177nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 2300pF @ 100V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 227W(Tc)
    Rds On(Max)@Id,Vgs 290mΩ@11A,10V
    working temperature -55°C~150°C
    Package/Enclosure TO-263
    FET type N-Channel
    Drain source voltage Vds 800V
    Continuous drain current Id 17A
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