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Small signal MOSFET DFN1616-6W

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    MPN RV4C020ZPHZGTCR1
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-RV4C020ZPHZGTCR1
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : DFN1616-6W

    Specifications FAQ

    Description Details Operation
    Product Category Small signal MOSFET
    Current at 25 ° C - Continuous Drain (Id) 2A(Ta)
    FET type P-Channel
    Vgs (maximum value) ±8V
    On resistance at different Id and Vgs (maximum value) 260mOhm @ 2A, 4.5V
    Vgs (th) (maximum value) for different IDs 1.3V @ 1mA
    Input capacitance (Ciss) at different Vds (maximum value) 80 pF @ 10 V
    Gate charge (Qg) at different Vgs (maximum value) 2 nC @ 4.5 V
    Power dissipation (maximum value) 1.5W(Ta)
    working temperature 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 20 V
    Drive voltage (maximum RdsOn, minimum RdsOn) 1.5V,4.5V
    Package/Enclosure DFN1616-6W
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    In Stock :  2,090

    Qty. Unit Price Ext. Price
    60+ $0.3737 $22.422
    100+ $0.322 $32.2
    500+ $0.2717 $135.85
    1,000+ $0.2611 $261.1
    2,000+ $0.2545 $509

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 60 Mult. 1

    Special Note

    Production Year: 2021