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Power MOSFET TO-247

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    MPN R6535ENZ4C13
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-R6535ENZ4C13
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-247

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 35A(Tc)
    FET type N-Channel
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 115 milliohms @ 18.1A, 10V
    Vgs (th) (maximum value) for different IDs 4V @ 1.21mA
    Input capacitance (Ciss) at different Vds (maximum value) 2600 pF @ 25 V
    Gate charge (Qg) at different Vgs (maximum value) 110 nC @ 10 V
    Power dissipation (maximum value) 379W(Tc)
    working temperature 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 650 V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
    Package/Enclosure TO-247
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    In Stock :  597

    Qty. Unit Price Ext. Price
    3+ $9.6275 $28.8825
    10+ $8.072 $80.72
    50+ $7.1405 $357.025
    100+ $6.8291 $682.91
    500+ $6.6807 $3,340.35

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 600 ETD HK 1~2 Weeks
    Min. 3 Mult. 1

    Special Note

    Production Year: 2022