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SIC MOSFET TO-247N

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    MPN SCT3022ALHRC11
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-SCT3022ALHRC11
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-247N

    Specifications FAQ

    Description Details Operation
    Product Category SIC MOSFET
    working temperature 175°C(TJ)
    Drive voltage (maximum RdsOn, minimum RdsOn) 18V
    technology SiCFET (silicon carbide)
    FET type N channels
    Leakage source voltage (Vdss) 650V
    Input capacitance (Ciss) at different Vds (maximum value) 2208pF @ 500V
    Package/Enclosure TO-247N
    Current at 25 ° C - Continuous Drain (Id) 93A(Tc)
    Vgs (th) (maximum value) for different IDs 5.6V @ 18.2mA
    Power dissipation (maximum value) 339W
    What is the gate charge at different Vgs? (Qg) (maximum value) 133nC @ 18V
    Vgs (maximum value) +22V,-4V
    On resistance at different Id and Vgs (maximum value) 28.6 milliohms @ 36A, 18V
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    In Stock :  188

    Qty. Unit Price Ext. Price
    1+ $84.4887 $84.4887

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 30 ETD HK 1~2 Weeks
    Min. 1 Mult. 1

    Special Note

    Production Year: 2020