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Power MOSFET IPD031N06L3GATMA1

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    MPN IPD031N06L3 G
    Other # IPD031N06L3GATMA1
    Mfr. Infineon
    Oneyac # A33-IPD031N06L3 G-0
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : OptiMOS3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum value) 13000pF @ 30V
    working temperature -55°C~175°C(TJ)
    Drain source voltage Vds 60V
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.2V @ 93µA
    Gate charge (Qg) at different Vgs (maximum value) 79nC @ 4.5V
    Number of channels 1Channel
    Continuous drain current Id 100A
    Rds On(Max)@Id,Vgs 2.5mΩ
    Gate voltage Vgs 20V
    QG gate charge 79nC
    to configure Single
    Pd power dissipation (Max) 167W
    height 2.3mm
    length 6.5mm
    Series OptiMOS3
    FET type N-Channel
    width 6.22mm
    Forward transconductance - minimum value 83S
    Descent time 13ns
    rise time 78ns
    Typical shutdown delay time 64ns
    Typical connection delay time 25ns
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    In Stock :  2,500

    Qty. Unit Price Ext. Price
    20+ $1.8816 $37.632
    50+ $1.8286 $91.43
    100+ $1.7623 $176.23
    500+ $1.7491 $874.55
    1,000+ $1.7226 $1,722.6

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Year: 2022