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Power MOSFET IPB072N15N3GATMA1 TO-263-2

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    MPN IPB072N15N3 G
    Other # IPB072N15N3GATMA1
    Mfr. Infineon
    Oneyac # A33-IPB072N15N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263-2

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Standard packaging quantity 1000
    Standard disconnect delay time 46 ns
    Series IPB072N15
    to configure Single
    rise time 35 ns
    Descent time 14 ns
    Number of channels 1Channel
    Drain source voltage Vds 150V
    Continuous drain current Id 100A
    Rds On(Max)@Id,Vgs 7.2mΩ@100A,10V
    Gate voltage Vgs ±20V
    QG gate charge 70nC
    Pd power dissipation (Max) 300W
    height 4.4mm
    length 10mm
    FET type N-Channel
    width 9.25mm
    Forward transconductance - minimum value 65S
    Typical shutdown delay time 46ns
    Typical connection delay time 25ns
    working temperature -55°C~175°C
    Package/Enclosure TO-263-2
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    In Stock :  970

    Qty. Unit Price Ext. Price
    5+ $4.9291 $24.6455
    10+ $4.0864 $40.864
    50+ $3.9088 $195.44
    100+ $3.7763 $377.63
    500+ $3.7233 $1,861.65

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 1~2 Weeks
    Min. 5 Mult. 1

    Special Note

    Production Year: 2022