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Power MOSFET IPB039N10N3GATMA1

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    MPN IPB039N10N3 G
    Other # IPB039N10N3GATMA1
    Mfr. Infineon
    Oneyac # A33-IPB039N10N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : OptiMOS3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum value) 8410pF @ 50V
    working temperature -55°C~175°C(TJ)
    Drain source voltage Vds 100V
    Drive voltage @ Rds On (Max), Rds On (Min) 6V,10V
    Vgs (th) at different IDs (maximum value) 3.5V @ 160µA
    Gate charge (Qg) at different Vgs (maximum value) 117nC @ 10V
    Number of channels 1Channel
    Continuous drain current Id 160A
    Rds On(Max)@Id,Vgs 3.9mΩ
    Gate voltage Vgs 10V
    QG gate charge 88nC
    to configure Single
    Pd power dissipation (Max) 214W
    height 4.4mm
    length 10mm
    Series OptiMOS3
    FET type N-Channel
    width 9.25mm
    Forward transconductance - minimum value 76S
    Descent time 14ns
    rise time 59ns
    Typical shutdown delay time 48ns
    Typical connection delay time 27ns
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    In Stock :  303

    Qty. Unit Price Ext. Price
    7+ $3.1059 $21.7413
    10+ $2.605 $26.05
    50+ $2.3042 $115.21
    100+ $2.128 $212.8

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 1~2 Weeks
    Min. 7 Mult. 1

    Special Note

    Production Year: 2022