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General Purpose Transistors 6-SMD

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    MPN IMN10T108
    Mfr. 爱声
    Oneyac # A3-IMN10T108
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 6-SMD

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    Datasheet

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    Specifications FAQ

    Description Details Operation
    Product Category General Purpose Transistors
    Series IMN
    height 1.1 mm
    length 2.9 mm
    Type of transistor Switching Diode
    width 1.6 mm
    to configure Triple Parallel
    recovery time 4 ns
    Vf forward voltage 1.2 V
    Power Rating 3/10W
    Maximum surge current 4:00 AM
    Ir reverse current 0.1 uA
    If forward current 300 mA
    Peak reverse voltage 80 V
    Diode configuration 3 independent types
    Type of diode standard
    Voltage DC reverse (Vr) (maximum value) 80V
    Current - Average rectification (Io) (per diode) 100mA
    Voltage at different If values - forward direction (Vf) 1.2V @ 100mA
    speed Small signal=<200mA (Io), any speed
    Reverse recovery time (trr) 4ns
    Current at different Vrs - reverse leakage current 100nA @ 70V
    Working temperature - structure 150 ° C (maximum)
    Package/Enclosure 6-SMD
    working temperature -55°C ~ 150°C
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