MPN | RD3L03BATTL1 |
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Mfr. |
ROHM Semiconductor
Authorized Distributor
|
Oneyac # | A3-RD3L03BATTL1 |
Supplier | Oneyac |
Product Cycle |
Production |
Unleaded/RoHs | YES |
Description |
Package/Enclosure : TO-252-3, DPak (2 leads+tab), SC-63
|
Datasheet |
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Description | Details | Operation |
---|---|---|
Product Category | Universal MOSFET | |
Current at 25 ° C - Continuous Drain (Id) | 35A(Ta) | |
FET type | P-Channel | |
Vgs (maximum value) | ±20V | |
On resistance at different Id and Vgs (maximum value) | 41 milliohms @ 35A, 10V | |
Vgs (th) (maximum value) for different IDs | 2.5V @ 1mA | |
Input capacitance (Ciss) at different Vds (maximum value) | 1930 pF @ 30 V | |
Gate charge (Qg) at different Vgs (maximum value) | 37 nC @ 10 V | |
Power dissipation (maximum value) | 56W (Ta) | |
Package/Enclosure | TO-252-3, DPak (2 leads+tab), SC-63 | |
working temperature | 150°C(TJ) | |
technology | MOSFET (Metal Oxide) | |
Leakage source voltage (Vdss) | 60 V | |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
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