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Power MOSFET TSMT8

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    MPN QH8MA3TCR
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3-QH8MA3TCR
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TSMT8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drain source voltage Vds 30V
    Continuous drain current Id 7A,5.5A
    Rds On(Max)@Id,Vgs 29mΩ@7A,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 1mA
    Gate charge (Qg) at different Vgs (maximum value) 7.2nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 300pF @ 15V
    Pd power dissipation (Max) 1.5W
    working temperature -55°C~150°C
    Package/Enclosure TSMT8
    FET type N+P-Channel
    Gate voltage Vgs ±20V
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    In Stock :  29 Lead Time:16W

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 5~17 Working Days
    Min. 1 Mult. 1

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