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Universal MOSFET TO-247N

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    MPN SCT3160KLHRC11
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3-SCT3160KLHRC11
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-247N

    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    working temperature 175°C(TJ)
    Drive voltage (maximum RdsOn, minimum RdsOn) 18V
    technology SiCFET (silicon carbide)
    FET type N channels
    Leakage source voltage (Vdss) 1200V
    Input capacitance (Ciss) at different Vds (maximum value) 398pF @ 800V
    Package/Enclosure TO-247N
    Current at 25 ° C - Continuous Drain (Id) 17A(Tc)
    Vgs (th) (maximum value) for different IDs 5.6V @ 2.5mA
    Power dissipation (maximum value) 103W
    What is the gate charge at different Vgs? (Qg) (maximum value) 42nC @ 18V
    Vgs (maximum value) +22V,-4V
    On resistance at different Id and Vgs (maximum value) 208 milliohms @ 5A, 18V
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