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Power Mosfet TUMT

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    MPN US6M11TR
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A3-US6M11TR
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    US6M11 Series N/ P-Channel 20 V/12 V 1 W 600 mOhm Drive MosFet SMT - TUMT-6

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    Datasheet

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Gate voltage Vgs ±10V,±10V
    Gate Charge (Qg) at Different Vgs (Maximum) 1.8nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum) 110pF @ 10V
    Rds On(Max)@Id,Vgs 180mΩ@1.5A,4.5V
    Drain-source voltage Vds 20V/12V
    Pd-power dissipation (Max) 1W
    Continuous Drain Current Id 1.5A,1.3A
    Package/Enclosure TUMT
    fet type N+P-Channel
    Operating temperature 150°C(TJ)
    Vgs (th) (maximum) at different Ids 1V @ 1mA
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    In Stock :  100

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    Min. 1 Mult. 1