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General MOSFET VESM

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    MPN SSM3J35AMFV,L3F
    Mfr. Toshiba
    Oneyac # A-SSM3J35AMFV,L3F
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : VESM

    Specifications FAQ

    Description Details Operation
    Product Category General MOSFET
    Vgs(Max) ±10V
    Pd-power dissipation (Max) 150mW(Ta)
    Drive voltage (Max RdsOn, Minimum RdsOn) 1.2V,4.5V
    RdsOn(Max)@Id,Vgs 1.4 ohms @ 150mA, 4.5V
    Product status in stock
    Package/Enclosure VESM
    Drain-source voltage Vds 20 V
    technology MOSFET (metal oxide)
    Input capacitance (Ciss) (maximum) at different Vds 42 pF @ 10 V
    Vgs(th) 1V @ 100uA
    Operating temperature 150°C
    Continuous Drain Current Id 250mA(Ta)
    fet type P-Channel
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