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Universal MOSFET I2PAK (TO-262) 10.67*4.83*11.3mm

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    MPN SIHF640L-GE3
    Mfr. Vishay
    Oneyac # A-SIHF640L-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : I2PAK (TO-262) Package/Enclosure : 10.67*4.83*11.3mm

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    Datasheet

    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    FET type N-Channel
    Continuous drain current Id 18 A
    Drain source voltage Vds 200 V
    Rds On(Max)@Id,Vgs 180 m0hms
    Minimum gate threshold voltage 2V
    Gate voltage Vgs -20 V、+20 V
    Package/Enclosure I2PAK (TO-262)
    Transistor configuration single
    pin number 3
    FET type enhance
    category Power MOSFET
    Power Rating 130W
    height 11.3mm
    Number of components per chip 1 Ohms
    Package/Enclosure 10.67*4.83*11.3mm
    Maximum operating temperature +150 °C
    Transistor material Si
    Drain source voltage Vds 1300 pF @ 25 V
    Typical shutdown delay time 45 ns
    Typical connection delay time 14 ns
    Minimum operating temperature -55 °C
    length 10.67mm
    width 4.83mm
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    In Stock :  0 Lead Time：14W

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