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Power MOSFET TO-220

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    MPN TK65E10N1,S1X(S
    Mfr. Toshiba
    Oneyac # A-TK65E10N1,S1X(S
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    FET type N-Channel
    Continuous drain current Id 148 A
    Drain source voltage Vds 100 V
    Rds On(Max)@Id,Vgs 4.8 m0hms
    Gate voltage Vgs 4V
    Gate voltage Vgs -20 V、+20 V
    Transistor configuration single
    pin number 3
    FET type enhance
    Power Rating 192W
    Maximum operating temperature +150 °C
    length 10.16mm
    height 15.1mm
    Series U-MOSVIII-H
    Number of components per chip 1 Ohms
    Drain source voltage Vds 5400 pF @ 50 V
    Typical shutdown delay time 85 ns
    Typical connection delay time 44 ns
    width 4.45mm
    Transistor material Si
    Package/Enclosure TO-220
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