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Power Mosfet TO-220

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    MPN TK65E10N1,S1X(S
    Mfr. Toshiba
    Oneyac # A-TK65E10N1,S1X(S
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Working temperature +150 °C
    Series U-MOSVIII-H
    Power Rating 192W
    Transistor Material Si
    Drain-source voltage Vds 100 V
    Gate voltage Vgs -20 V、+20 V
    fet type N-Channel
    height 15.1mm
    Continuous Drain Current Id 148 A
    Number Of Pins 3
    Rds On(Max)@Id,Vgs 4.8 m0hms
    Package/Enclosure TO-220
    Drain-source voltage Vds 5400 pF @ 50 V
    length 10.16mm
    Transistor Configuration Single
    Typical Off-Delay Time 85 ns
    Number Of Components Per Chip 1 Ohms
    Gate voltage Vgs 4V
    fet type Enhance
    width 4.45mm
    Typical on-delay time 44 ns
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