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Power MOSFET IPG16N10S4L-61A 8-PowerVDFN

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    MPN IPG16N10S4L61AATMA1
    Other # IPG16N10S4L-61A
    Mfr. Infineon
    Oneyac # A-IPG16N10S4L61AATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerVDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 16A
    FET function Logic level gate
    FET type 2 N-channels (dual)
    On resistance at different Id and Vgs (maximum value) 61 milliohms @ 16A, 10V
    Vgs (th) (maximum value) for different IDs 2.1V @ 90uA
    Input capacitance (Ciss) at different Vds (maximum value) 845pF @ 25V
    Gate charge (Qg) at different Vgs (maximum value) 11nC @ 10V
    Power - maximum value 29W
    Package/Enclosure 8-PowerVDFN
    working temperature -55°C ~ 175°C(TJ)
    Leakage source voltage (Vdss) 100V
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