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IGBT module modular

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    MPN FF11MR12W1M1B11BOMA1
    Mfr. Infineon
    Oneyac # A-FF11MR12W1M1B11BOMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : modular

    Specifications FAQ

    Description Details Operation
    Product Category IGBT module
    Current at 25 ° C - Continuous Drain (Id) 100A
    FET function Silicon carbide (SiC)
    FET type 2 N-channels (dual)
    On resistance at different Id and Vgs (maximum value) 11 milliohms @ 100A, 15V
    Vgs (th) (maximum value) for different IDs 5.55V @ 40mA
    Input capacitance (Ciss) at different Vds (maximum value) 7950pF @ 800V
    Gate charge (Qg) at different Vgs (maximum value) 250nC @ 15V
    Package/Enclosure modular
    working temperature -40°C ~ 150°C(TJ)
    Leakage source voltage (Vdss) 1200V(1.2kV)
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