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IGBT module Module

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    MPN DF23MR12W1M1PB11BPSA1
    Mfr. Infineon
    Oneyac # A-DF23MR12W1M1PB11BPSA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : Module

    Specifications FAQ

    Description Details Operation
    Product Category IGBT module
    On resistance at different Id and Vgs (maximum) 45 milliohm @ 25A, 15V
    Package/Enclosure Module
    Power-maximum 20mW
    fet type 2 N-channel (dual)
    Current at 25°C-Continuous Drain (Id) 25A(Tj)
    Operating temperature -40°C ~ 150°C(TJ)
    Vgs(th) (maximum) when different Id 5.55V @ 10mA
    Gate charge at different VGS (QG) (maximum) 62nC @ 15V
    Input capacitance (Ciss) (maximum) at different Vds 1840pF @ 800V
    FET function Silicon Carbide (SiC)
    Drain-Source Voltage (Vdss) 1200V(1.2kV)
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