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Power MOSFET TO-220

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    MPN MDP1932TH
    Mfr. MAGNACHIP
    Oneyac # A-MDP1932TH
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    FET type N-Channel
    Continuous drain current Id 175 A
    Drain source voltage Vds 80 V
    Rds On(Max)@Id,Vgs 3.4 m0hms
    Gate voltage Vgs 4V
    Gate voltage Vgs -20 V、+20 V
    pin number 3
    Transistor configuration single
    FET type enhance
    Power Rating 209 W
    width 4.83mm
    Typical connection delay time 31 ns
    Typical shutdown delay time 48 ns
    Drain source voltage Vds 7200 pF @ 40 V
    Transistor material Si
    Minimum operating temperature -55 °C
    Number of components per chip 1 Ohms
    length 10.67mm
    height 16.51mm
    Forward transconductance 90S
    Forward diode voltage 1.2V
    Maximum operating temperature +150 °C
    Package/Enclosure TO-220
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